Modified Magnetron Type Plasma Source for Etching Applications.
نویسندگان
چکیده
منابع مشابه
Inductively Coupled Plasma Etching of Bulk Titanium for MEMS Applications
Titanium is a promising new material system for the bulk micromachining of microelectromechanical MEMS devices. Titaniumbased MEMS have the potential to be used for a number of applications, including those which require high fracture toughness or biocompatibility. The bulk titanium etch rate, TiO2 mask etch rate, and surface roughness in an inductively coupled plasma ICP as a function of vario...
متن کاملSelective Plasma Etching of Polymeric Substrates for Advanced Applications
In today's nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on mater...
متن کاملPulsed plasma etching for semiconductor manufacturing
Power-modulated (pulsed) plasmas have demonstrated several advantages compared to continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching rate, better uniformity, and less structural, electrical or radiation (e.g. vacuum ultraviolet) damage. Pulsed plasmas can also ameliorate unwanted artefacts in etched micro-features such as notching, bowing, micro-trenching ...
متن کاملMeter Long, Homogeneous Plasma Source for Advanced Accelerator Applications
A prototype for a l-meter long plasma source is developed for plasma acceleration experiments. The lithium neutral vapor with a density of 2×10 t5 cm 4 is ionized by a uv laser pulse and produces a plasma density of 2.6x10 ~4 cm 3. The plasma density is limited by the available uv energy. In this prototype, the length of the neutral vapor and plasma column is 25 cm. After ionization the plasma ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: SHINKU
سال: 1998
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.41.315